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產品資訊 |
詢價 |
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| Description | 濱松_PHOTO IC DIODE | | λP(nm) | 960nm | | Vr | 5V |
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| Description | 濱松_PHOTO IC DIODE | | λP(nm) | 960nm | | Vr | 5V |
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| Description | Photo IC Diode | | λP(nm) | 560 | | △θ(deg) | |
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| Description | 濱松_光接收二極體 | | λP(nm) | 560nm | | Vr | 10V |
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| Description | BNC連接器與矽光電二極體 | | λP(nm) | 960 | | Package | Metal package with BNC connetor |
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| Description | 濱松_APD optimized for Infrared Low Bias Voltage type | | λP(nm) | 800nm | | △θ(deg) | |
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| Description | 濱松_APD optimized for Infrared Low Bias Voltage type | | λP(nm) | 800nm | | △θ(deg) | |
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| Description | 濱松_APD (雪崩光電二極管), For 800nm Band | | λP(nm) | 800nm | | Vr | 0.65 |
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| Description | 濱松_APD (雪崩光電二極管), For 800nm Band | | λP(nm) | 800nm | | △θ(deg) | |
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| Description | 濱松_photodiode | | λP(nm) | 800nm | | △θ(deg) | 5.0mm |
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