| 圖片 |
產品資訊 |
詢價 |
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| Description | 濱松_光接收二極體 | | λP(nm) | 760nm | | Vr | 20V |
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| Description | 濱松_APD optimized for Infrared Low Bias Voltage type | | λP(nm) | 800nm | | △θ(deg) | |
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| Description | 濱松_光接收二極體 | | λP(nm) | 960nm | | Vr | 12V |
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| Description | 濱松_photodiode | | λP(nm) | 960nm | | △θ(deg) | 0.58mm |
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| Description | 濱松_photodiode | | λP(nm) | 960nm | | Vr | 30V |
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| Description | 濱松_Ceramic package photodiode with low dark current | | λP(nm) | | | △θ(deg) | |
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| Description | Hamamatsu_Si photodiode | | λP(nm) | 720nm | | △θ(deg) | |
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| Description | HAMAMATSU_APD模塊 | | λP(nm) | 800nm | | △θ(deg) | |
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| Description | 濱松_光接收二極管 | | λP(nm) | 960nm | | △θ(deg) | |
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| Description | 濱松_光接收二極體 | | λP(nm) | 560nm | | Vr | 10V |
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